professoren_webseiten:rebholz:course_a_power_electronics
Unterschiede
Hier werden die Unterschiede zwischen zwei Versionen angezeigt.
Beide Seiten der vorigen RevisionVorhergehende ÜberarbeitungNächste Überarbeitung | Vorhergehende Überarbeitung | ||
professoren_webseiten:rebholz:course_a_power_electronics [2025/05/05 19:07] – [Experiment] hrebholz | professoren_webseiten:rebholz:course_a_power_electronics [2025/06/27 07:17] (aktuell) – [PWM-Signals] hrebholz | ||
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{{ : | {{ : | ||
Gate drivers are often equipped with additional features. Our driver can detect overcurrents and if necessary, will turn off all MOSFETs for safety. Since overcurrents in a simulation tool will not damage your PC or notebook, you can ignore this feature in the simulation. Pull up the RFE output and connect ITRIP to ground. \\ | Gate drivers are often equipped with additional features. Our driver can detect overcurrents and if necessary, will turn off all MOSFETs for safety. Since overcurrents in a simulation tool will not damage your PC or notebook, you can ignore this feature in the simulation. Pull up the RFE output and connect ITRIP to ground. \\ | ||
- | Datasheet: {{ : | + | Datasheet: {{ : |
+ | Download {{ : | ||
<WRAP center round todo 80%> | <WRAP center round todo 80%> | ||
Zeile 248: | Zeile 249: | ||
<WRAP center round todo 80%> | <WRAP center round todo 80%> | ||
**Task 9a** | **Task 9a** | ||
- | Use two oscilloscope probes to visualize the output signals for the high-side and low-side MOSFET. \\ | + | Use two oscilloscope probes to visualize the output signals |
**Task 9b** | **Task 9b** | ||
Measure the minimum and maximum of the adjustable deadtime.\\ | Measure the minimum and maximum of the adjustable deadtime.\\ | ||
Zeile 275: | Zeile 276: | ||
**Task 10a** | **Task 10a** | ||
Measure how long it takes for the driver to start doing anything when it receives a high signal and turns on the high-side MOSFET\\ | Measure how long it takes for the driver to start doing anything when it receives a high signal and turns on the high-side MOSFET\\ | ||
+ | Attention: To measure the gate source voltage of the high-side MOSFET at differential voltage probe is needed. Do you now why? \\ | ||
**Task 10b** | **Task 10b** | ||
How long does it take to bring the gate-source voltage to the desired value?\\ | How long does it take to bring the gate-source voltage to the desired value?\\ | ||
**Task 10c** | **Task 10c** | ||
- | Determine the same values for turning the MOSFET off and for the low-side MOSFET.\\ | + | Determine the same values for turning the MOSFET off and for the low-side MOSFET. |
**Task 10d** | **Task 10d** | ||
Now set the frequency to 30 kHz. Does this make sense? What is your conclusion for the minimal duty cycle? | Now set the frequency to 30 kHz. Does this make sense? What is your conclusion for the minimal duty cycle? | ||
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Please use the following parameters: \\ | Please use the following parameters: \\ | ||
Switching Frequency: 20kHz\\ | Switching Frequency: 20kHz\\ | ||
- | Inductor: | + | Inductor: |
Capacitor: 4700µF \\ | Capacitor: 4700µF \\ | ||
Load: 25W, 5V, 5A \\ | Load: 25W, 5V, 5A \\ |
professoren_webseiten/rebholz/course_a_power_electronics.1746472045.txt.gz · Zuletzt geändert: 2025/05/05 19:07 von hrebholz